دیتاشیت SI8409DB-T1-E1
مشخصات دیتاشیت
| نام دیتاشیت |
SI8409DB-T1-E1
|
| حجم فایل |
87.3
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Vishay Intertech SI8409DB-T1-E1
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
1.47W
-
Total Gate Charge (Qg@Vgs):
26nC@4.5V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
4.6A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
46mΩ@1A,4.5V
-
Package:
MicroFoot-4
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Manufacturer:
Vishay Intertech
